Transistor archives - Page 22 of 2673

NJW21194G is a high-speed, high-current, NPN bipolar junction transistor (BJT) designed for use in audio amplifier applications.

Function: 16A, 250V, 200W, NPN Power Transistor

Package: TO-3P Type

Manufacturer: ON Semiconductors

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NJW21194G datasheet

Description

The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant

Pinouts

NJW21194G pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 250 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 16 A

5. Total Dissipation: Pd = 200 W

6. Junction Temperature: Tj = -65 ~ +150°C150°C

7. Storage Temperatue: Tsg = -65 ~ +150°C

Applications

1. Audio amplifier circuits, including high-fidelity audio amplifiers

2. Professional audio equipment, power amplifiers for speakers

Other data sheets within the file : PNP Type ( NJW21193G )

NJW21194G Datasheet PDF

General-Purpose Operational Amplifier

Part Number: C1959

Function: 30V, 500mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba, Micro Commercial Components

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2SC1959 transistor

Description

The 2SC1959 is a silicon NPN bipolar junction transistor (BJT) primarily designed for general-purpose amplifier applications.

1. Voltage Ratings:

(1) Collector-Base Voltage (VCBO): Typically around 35V (Volts). This is the maximum voltage that can be applied between the collector and base terminals when the emitter is open.

(2) Collector-Emitter Voltage (VCEO): Typically around 30V (Volts). This is the maximum voltage that can be applied between the collector and emitter terminals when the base is open.
Current Ratings:

2. Continuous Collector Current (IC):

Typically around 500mA (Milliamperes). This is the maximum continuous current that the transistor can handle flowing from the collector to the emitter.