Transistor

10N60C PDF Datasheet – 600V, 9.5A, N-Ch, MOSFET – FQP10N60C

Posted on by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 10N60C, FQP10N60C

Function: 600V, 9.5A, N-Channel MOSFET

Package: TO-220, TO-220F type

Manufacturer: Fairchild Semiconductor ( https://www.onsemi.com/ )

Image

10N60C transistor mosfet

 

Description

The 10N60C is 600V, 9.5A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

 

Features

1. 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V

2. Low gate charge ( typical 44 nC)

3. Low Crss ( typical 18 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

 

Pinout

10N60C transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9.5 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

 

10N60C PDF Datasheet

K3568 Datasheet PDF – 500V, 12A, N-Ch, MOSFET – Toshiba

Posted on by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3568

Function: 500V, 12A, N-Channel MOSFET

Package: TO-220FP-3 Type

Manufacturer: Toshiba

Image

K3568 image

Description

K3568 is 500V, 12A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.4 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3568 datasheet

Absolute Maximum Ratings (Ta = 25°C):

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain power dissipation : PD = 40 W

5. Single pulse avalanche energy : Eas = 364 mJ

6. Avalanche curren : Iar = 12 A

7. Repetitive avalanche energy : Ear = 4 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

Marking Information :

K3568 marking

Applications:

1. Switching Regulator

K3568 Datasheet PDF Download

K3568 pdf


 

Other data sheets are available within the file: 2SK3568

Posts related to ‘ MOSFET ‘

Part number Description
2SK3561 2SK3561 Datasheet PDF- N-ch, MOSFET, 500V, 8A – Toshiba
HY3506P HY3506P PDF – 60V, 190A, N-Ch, MOSFET ( Datasheet )
IRF9540N P-Ch, (-)100V, MOSFET (Transistor)
UF830 MOSFET, 4.5A, 500V, Transistor
11N60C3 650V, 11A, MOSFET, Transistor
LR2905 55V, 42A, HEXFET MOSFET ( PDF )
FDMA6023PZT 20V, Dual, P-Ch, MOSFET, Array
2SK2662 2SK2662 MOSFET – 500V, 5A, Transistor ( Datasheet PDF )
2N7002T 60V, N-channel MOSFET
04N60C3 650V, 4.5A, MOSFET – Infineon

 

Related articles across the web