Transistor

7N60 PDF Datasheet – 600V, 7A, N-Ch, MOSFET ( Transistor )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 7N60

Function: 7A, 600V, N-CHANNEL MOSFET

Package: TO-220AB, TO-263

Manufacturer: CHONGQING PINGYANG

Images:7N60 pdf pinout

Description

This is 7A mps, 600 Volts N-CHANNEL MOSFET. The 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts.

Features:

1. 7A, 600V, RDS(ON)=1.2Ω@VGS=10V/3.5A

2. Low gate charge

3. Low Ciss

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

Package Informations :

(1) TO-220AB 7N60
(2) ITO-220AB 7N60F
(3) TO-263 7N60B
(4) TO-262 7N60H

7N60 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Single pulse avalanche energy : Eas = 550 mJ

5. Avalanche curren : Iar = 7 A

7. Repetitive avalanche energy : Ear = 54 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

[…]

 

7N60 Datasheet PDF

7N60 pdf

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FGPF4633 PDF – 330V, 300A, IGBT, Transistor, TO-220F

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Part Number: FGPF4633

Function: 330V, PDP IGBT ( insulated-gate bipolar transistor )

Package: TO-220F Type

Manufacturer: Fairchild Semiconductor

Images:FGPF4633 pdf pinout

Description

FGPF4633 is 330V, 300A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.

Features

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.55 V @ IC = 70 A

• High Input Impedance

• Fast Switching

• RoHS Compliant

FGPF4633 datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 330 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 300 A

4. Collector dissipation : Pc = 30.5 W (Ta = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

• PDP TV, Consumer Appliances, Lighting

 

FGPF4633 PDF Datasheet