Transistor

IRF3205 Datasheet – 55V, 110A, HEXFET Power MOSFET

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What is IRF3205?

This is one of the types of MOSFETs and is a kind of transistor. IRF3205 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) used in electronic circuits for switching and amplification applications. It has a low on-resistance and can handle high current and voltage levels, making it suitable for use in power supplies, motor control circuits, and other high-power applications

Function: Power MOSFET ( Vdss=55V/ Rds(on)=8.0mohm/ Id=110A )

Package: TO-220AB Type

Manufacturer: International Rectifier

Image
IRF3205 image

Description

This is N-channel MOSFET with a voltage rating of 55V and a current rating of 110A.

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3205 pinout

IRF3205 datasheet

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Advantages

1. The low on-state resistance allows for efficient power management and reduces power loss.
2. The high current and voltage rating make it suitable for high-power applications.

3. It has a fast switching speed, making it ideal for use in high-frequency applications.

Disadvantages

1. It is relatively large compared to other MOSFETs, making it less suitable for use in space-constrained applications.

2. It may not be suitable for low-power applications due to its high current and voltage ratings.

IRF3205 Datasheet

IRF3205 pdf


 

C3507 Transistor – NPN, Equivalent, Datasheet (2SC3507)

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Part Number: C3507, 2SC3507

Function: 800V, 5A, NPN Transistor

Package: TOP-3F-A1 Type

Manufacturer: Panasonic

Images:

C3507 transistor

Description

This is Power Transistor. 2SC3507 is Silicon NPN triple diffusion planar type.

:

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) VCBO

• Satisfactory linearity of forward current transfer ratio hFE

• Full-pack package which can be installed to the heat sink with one screw

■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C Symbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 800 7 5 3 10 80 3.0 150 −55 to +150 °C °C Unit V V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Base current Peak collector current Collector power dissipation 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Junction temperature Storage temperature

■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage – Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions

C3507 transistor datasheet panasonic

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1000 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications:

1. High breakdown voltage high-speed switching

C3507 PDF Datasheet

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