Transistor

30F132 Datasheet – 360V, 250A, IGBT, TO220-SM – Toshiba

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What is 30F132?

This is Insulated Gate Bipolar Transistor. This is widely used in high-power applications where high voltage and high current handling capabilities are required. IGBTs combine the high-speed switching capability of a MOSFET with the high voltage handling capability of a bipolar junction transistor (BJT). IGBTs are widely used in high-power applications where high voltage and high current handling capabilities are required.

Function : 360V, 250A, IGBT

Package : TO-263, TO-220SM(MXN) Type

Manufacturer: Toshiba

Image

30F132 IGBT

Description

IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive. The conductivity modulation characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.

Ordering Informations:

30F132 Toshiba

Features

1. IGBTs also featuring fast switching
2. Low collector-emitter saturation voltage even in the large current area
3. IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
4. High input impedance allows voltage drives
5. Available in a variety of packages

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 360 V

2. Collector Current: Ic = 250 A

3. Collector Dissipation: Pc = 140 W

Pinout

30F132 pinout

Applications:

1. PDP sustain, energy recovery and separation circuits

Other data sheets are available within the file: GT30F132

30F132 Datasheet PDF

30F132 pdf

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IRG4PC50U Datasheet – 600V, 55A, IGBT, Transistor

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What is IRG4PC50U?

This is IGBT. The IGBT is insulated-gate bipolar transistor. It has a maximum voltage rating of 600V and a maximum current rating of 55A, making it suitable for high-power circuits.

Function: 600V, 55A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:

IRG4PC50U datasheet

 

Description

This is 600V, 55A, UltraFast Speed IGBT. This is a high voltage insulated gate bipolar transistor (IGBT) designed for use in power electronics applications, such as motor drives, power supplies, and renewable energy systems.

Benefits

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Features

1. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-247AC package

 

Advantages

1. Designed for high-power applications, making it suitable for motor drives, power supplies, and renewable energy systems.

2. Ultrafast switching speed and low switching loss improve efficiency.

3. Short-circuit rating enhances reliability in high-power applications.

4. NPT technology improves ruggedness and avalanche energy capability.

QnA

Q1: What is the difference between IGBT and MOSFET?

A1: IGBTs and MOSFETs are both types of power transistors used in electronic circuits. IGBTs are typically used in high-power applications where low on-state voltage drop and high current handling capability are required. MOSFETs are used in low-power applications where fast switching speeds and low gate drive requirements are important.

Other data sheets are available within the file: IRG4PC50, IRG4PC50UPBF

 

IRG4PC50U Datasheet PDF Download


IRG4PC50U pdf

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