Transistor

DFF2N60 Datasheet – 600V, 2.4A, N-Ch, MOSFET, Transistor

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What is DFF2N60?

This is a N-Channel Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high voltage and high power applications.

Function: 600V, 2.4A, N-Channel MOSFET

Package: TO-220 / TO-220F

Manufacturer: Discrete & Integration Semiconductor

Image and Pinouts:
DFF2N60 datasheet

Description

The DFF2N60 is 600V, 2.4A, High ruggedness N-Channel MOSFET.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

The TO-220 & TO220 full packagesare well suited for charger SMPS and small power inverter application.

 

Features

1. High voltage (600V) rating
2. High power (2.4A) handling capability
3. Low on-resistance (5.5Ω) for low conduction losses
4. Fast switching speed for efficient operation
5. TO-220 package for easy mounting and thermal management

The DFF2N60 is suitable for use in a wide range of high voltage and high power applications, such as power supplies, motor control, lighting ballasts, and other high current switching applications. Its low on-resistance and fast switching speed help to minimize power losses and improve overall efficiency.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 2.4 A

4. Total Power Dissipation: Pd = 28 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: DFF-2N60, DFP2N60

DFF2N60 Datasheet PDF Download


DFF2N60 pdf

2N3905 Datasheet – 40V, 200mA, PNP Transistor

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What is 2N3905?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Maximum collector current: 0.2A, Maximum collector-emitter voltage: 40V.

Part Number: 2N3905

Function: Small Signal General Purpose PNP Transistor

Package: TO-92 Type

Manufacturer: Unspecified

Image and Pinouts:

2N3905 datasheet

 

Description

This is PNP Silicon Epitaxial Transistor. This is commonly used in audio amplifier circuits, voltage regulators, and switching circuits.

Features

1. PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications

2. RoHS Compliance

Advantages Vs Disadvantages

Advantages:

1. High voltage and current handling capabilities
2. Low noise and distortion for use in audio amplifier circuits
3. Low power dissipation for efficient operation

Disadvantages:

1. Limited maximum current rating, which makes it unsuitable for high power applications
2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications
3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits

Mechanical Data :

1. Case:  TO-92, Plastic Package

2. Terminals:  Solderable per MIL-STD-202G, Method 208

3. Weight:  0.18 gram

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 40 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 200 mA

5. Power Dissipation: Pd = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

2N3905 Datasheet PDF Download

2N3905 pdf

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