What is BSS123?
An N-channel enhancement mode vertical D-MOS transistor is a type of field-effect transistor (FET) that is designed for high-power applications. It uses a vertical structure to improve its performance.
In a vertical D-MOS transistor, the source and drain regions are located on opposite sides of the silicon substrate, with the gate electrode running vertically between them. When a voltage is applied to the gate, an electric field is created that controls the flow of current through the channel.
The “D” in D-MOS stands for “double-diffused”, which refers to the way that the doping profiles are created during the manufacturing process. This allows for a more precise control of the channel and reduces the on-resistance of the device, making it more efficient.
The “MOS” in MOS transistor stands for “metal-oxide-semiconductor”, which refers to the way that the gate electrode is insulated from the channel by a thin oxide layer.
Part Number: BSS123
Function: 100V, 150mA, Vertical D-MOS transistor
Package: SOT23 Type
Manufacturer: Philips Semiconductor
Image and Pinouts:
Description
The BSS123 is 100V, 150mA, N-channel TrenchMOS transistor Logic level FET.
N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
Features
1. ’Trench’technology
2. Extremely fast switching
3. Logic level compatible
4. Subminiature surface mounting package
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 150 mA
4. Total Power Dissipation: Pd = 250 mW
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
BSS123 Datasheet PDF Download
