K2611 Datasheet – 9A, 900V, N-Ch, MOSFET – Toshiba

What is K2611?

It has a maximum voltage rating of 900 volts and a maximum current rating of 9 amperes.
The K2611 is a high voltage, high power MOSFET transistor that is commonly used in power supplies, audio amplifiers, and motor control circuits.

Part Number: 2SK2611

Function: 900V, 9A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Image
K2611 mosfet

Description

This is 9A, 900V, Silicon N-Channel MOS Type (π−MOSIII) Field Effect Transistor. This parts have high voltage and high power capabilities and low on-resistance for efficient switching. It also ensures fast switching speeds for high-frequency applications.

Features

1. Low drain−source ON resistance  : RDS (ON)= 1.1 Ω(typ.)

2. High forward transfer admittance  : |Yfs| =7.0 S (typ.)

3. Low leakage current  : IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K2611 datasheet pdf pinout

Advantages Vs Disadvantages

Advantages:

1. High voltage and power ratings make it suitable for high power applications
2. Low on-resistance results in less power dissipation and higher efficiency
3. Fast switching speed allows for high frequency operation
4. Low gate drive requirements simplify the control circuitry

Disadvantages:

1. The K2611 may be more expensive than lower voltage or lower power MOSFETs due to its high specifications
2. The high voltage rating may require additional safety precautions when working with the device
3. The high power rating may result in the need for additional heat sinking or cooling measures to prevent overheating

Applications:

1. DC-DC Converter, Relay Drive and Motor Drive

 

FAQs

Q1: What is the difference between a MOSFET transistor and a regular transistor?

A1: A MOSFET transistor operates by controlling the voltage applied to a gate electrode, whereas a regular transistor controls the current flowing through a base electrode. MOSFETs typically have higher input impedance and faster switching speeds than regular transistors.

Q2: How do I protect a MOSFET transistor from overvoltage or overcurrent?

A2: To protect a MOSFET transistor from overvoltage, a voltage clamping device such as a zener diode or TVS diode can be used. To protect against overcurrent, a fuse or current limiting device can be used. Careful consideration of the device’s specifications and the application’s requirements is essential for effective protection.

 

K2611 Datasheet


 

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What is MJ15015? – 15A, 120V, NPN Transistor – SavantIC

What is MJ15015?

It is a power transistor designed for use in high-power audio amplifier applications and other high-power switching applications.

The MJ15015 is an NPN bipolar junction transistor with a maximum collector current of 15 amps and a maximum collector-emitter voltage of 120 volts.

Function: Silicon NPN Power Transistor

Package: TO-3 Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:

MJ15015 datasheet

Description

Silicon NPN high frequency, high power transistorsin a metal envelope, primarily for use in audio andgeneral purpose.

Features

1. With TO-3 package
2. Complement to type MJ15016
3. Excellent safe operating area

 

Advantages

The MJ15015 offers high power handling capabilities, making it ideal for use in high-power audio amplifiers and other power switching applications. It also has a low collector-emitter saturation voltage, which helps to minimize power loss and improve efficiency. The transistor’s wide operating temperature range allows it to be used in a variety of different environments.

Disadvantages

One potential disadvantage of the transistor is its relatively high cost compared to other power transistors. Additionally, its high current and voltage ratings make it unsuitable for low-power applications, where a smaller, lower-cost transistor might be sufficient.

 

Applications

1. For high power audio, stepping motor and other linear applications
2. Relay or solenoid drviers
3. DC-DC converters inverters

Absolute Maximum Ratings

1. Collector-base voltage Open emitter : VCBO = 200 V
2. Collector-emitter voltage Open base : VCEO = 120 V
3. Emitter-base voltage Open collector : VEBO = 7 V
4. Collector current : IC = 15 A
5. Base current : IB = 7 A
6. Collector power dissipation : PC = 180 W

MJ15015 Datasheet

MJ15015 pdf