C5296 PDF – Vceo=800V, 8A, NPN Transistor – 2SC5296

What is C5296?

This is a part number for an NPN bipolar junction transistor, which is commonly used as a switching device in electronic circuits. It has a maximum voltage rating of 800V and a maximum current rating of 8A, making it suitable for high power applications.

Part Number: 2SC5296

Function: 800V, 8A, NPN Triple Diffused Planar Silicon Transistor

This Transistor package is TO-3PML Type.

Manufacturer: Sanyo Semicon Device

Images:

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C5296 pdf datasheet

Description

The C5296 transistor is housed in a TO-3PML package, which provides good thermal dissipation and mechanical strength. It is commonly used in power supply circuits, motor control circuits, and other applications that require high voltage and high current switching.

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Features

1. High speed : tf=100ns typ.

2. High breakdown voltage : VCBO=1500V.

3. High reliability (Adoption of HVP process).

4. Adoption of MBIT process.

5. On-chip damper diode.

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 1500 V

2. Collector-to-Emitter Voltage : VCEO = 800 V

3. Emitter-to-Base Voltage : VEBO = 6 V

4. Collector Current : IC = 8 A

5. Collector Current (Pulse) : ICP = 16 A

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C5296 transistor equivalent

 

Applications

1. Ultrahigh-Definition CRT Display Horizontal Deflection Output

Advantages

1. High voltage and current rating make it suitable for power switching applications

2. High gain allows for low drive current requirements

3. Low saturation voltage reduces power dissipation and improves efficiency

C5296 PDF Datasheet

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MJE13003BR Datasheet PDF – 400V, 1.5A, NPN Transistor

What is MJE13003BR?

This is a type of bipolar junction transistor (BJT) produced by Mospec Semiconductor. It is a high voltage and high-speed NPN transistor with a maximum collector-emitter voltage of 400 volts and a maximum collector current of 1.5 amps.

Function: 1.5A, 400V, 40W,  NPN Power Transistor

Package: TO-220 type

Manufacturer: Mospec Semiconductor

Image and Pinouts:

MJE13003BR datasheet

Description

MJE13003BR designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter, Motor control, Solenoid / Relay drivers and deflection circuits.

Absoulte maximum ratings

1. Collector-Emitter Voltage: Vceo = 400 V
2. Collector-Emiiter Voltage : Vcev = 700 V
3. Emitter-Base Voltage: Vebo = 9.0 V
4. Collector Current: Ic = 1.5 A
5. Base Current : Ib = 0.75 A
6. Total Power Dissipation: Pd = 40 W ( Tc = 25°C )
7. Operating and Storage Junction Temperature Range : Tj, Tstg = – 65 to + 150 °C

 

components

This transistor is designed for use in a variety of electronic applications, including switching power supplies, electronic ballasts, and electronic ignition systems. It features a fast switching time and a high breakdown voltage, which makes it suitable for use in high voltage applications.

Other data sheets are available within the file: 13002BR, 13003BR, MJE13002, MJE13002BR, MJE13003

MJE13003BR Datasheet PDF Download

MJE13003BR pdf