IRF540S Datasheet PDF – 100V, 28A, N-Ch, MOSFET, Transistor

Posted on July 30, 2022December 21, 2022 by pinout

Part Number: IRF540S

Function: 100V, 28A, N-Channel MOSFET

Package: D2PAK Type

Manufacturer: Vishay Semiconductors

Image and Pinouts:

IRF540S datasheet

Description

The IRF540S is 100V, 28A, N-Channel Power MOSFET.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capabilityand the lowest possible on-resistance in any existing surface mount package.

The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

Features

1. Halogen-free According to IEC 61249-2-21 Definition

2. Surface Mount

3. Available in Tape and Reel

4. Dynamic dV/dt Rating

5. Repetitive Avalanche Rated

6. 175 °C Operating Temperature

7. Fast Switching

8. Ease of Paralleling

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 28 A

4. Maxumum Power Dissipation: Pd = 3.7 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRF540, IRF540SPBF, IRF540STRLPBF, IRF540STRRPBF, SIHF540S-E3

IRF540S Datasheet PDF Download

G4PC40UD Datasheet PDF – 600V, 40A, UltraFast IGBT – IR

Posted on July 30, 2022January 3, 2023 by pinout

This is one of the semiconductor types.

This part name is IRG4PC40UD, G4PC40UD.

This product has 600V, 40V, UltraFast IGBT functions.

The package is TO-247AC Type

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Image and Pinouts:

G4PC40UD datasheet

Description

The G4PC40UD is N-Channel, 600V, 40A, UltraFast IGBT.

The IGBT is insulated-gate bipolar transistor.

Features

1. UltraFast : Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

4. Industry standard TO-247AC package

Benefits :

1. Generation-4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 40 A (Tc = 25°C)

4. Collector dissipation : Pd = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

G4PC40UD Datasheet PDF Download

Other data sheets are available within the file: G4PC40, IRG4PC40UD