Transistor

PEMB2 Datasheet PDF – 50V, 100mA, PNP/PNP Transistor

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Part Number: PEMB2

Marking : B2

Function: PNP / PNP Resistor-equipped Transistor ( R1 = 47 k Ohm, R2 = 47 k Ohm )

Package: SOT-666 Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

PEMB2 datasheet

 

Description

The PEMB2 is PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted
Device (SMD) plastic packages.

Let’s take a look at the features of this transistor.

1. 100 mA output current capability

2. Built-in bias resistors

3. Simplifies circuit design

4. Reduces component count

5. Reduces pick and place costs

6. AEC-Q101 qualified

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 50 V

2. Collector to Emitter Voltage: Vceo = – 50 V

3. Emitter to Base Voltage: Vebo = – 10 V

4. Output Current : Io = – 100 mA

5. Total Power Dissipation : Ptot = 200 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

 

Applications:

1. Low current peripheral driver

2. Control of IC inputs

3. Replaces general-purpose transistors in digital applications

 

 

PEMB2 Datasheet PDF Download


PEMB2 pdf

Other data sheets are available within the file: PEMH2, PUMB2

IRFP150N Datasheet PDF – 100V, 42A, MOSFET, Transistor

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Part Number: IRFP150N

Function: 100V, 42A, HEXFET Power MOSFET

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRFP150N datasheet

 

Description

The IRFP150N is HEXFET Power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 42 A

4. Drain Power Dissipation: Pd = 160 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRFP150, IRFP150NPBF

 

IRFP150N Datasheet PDF Download


IRFP150N pdf

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