Transistor

K30N60HS Datasheet PDF – 600V, 30A, MOSFET, Transistor

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Part Number: SKW30N60HS

Marking : K30N60HS

Function: 600V, 30A, High Speed IGBT

Package: TO-247-3 Type

Manufacturer: Infineon Technologies

Pinouts:

K30N60HS datasheet

Description

This is 600V, 30A, High Speed IGBT in NPT-technology.

The IGBT is insulated-gate bipolar transistor.

Image:

components

Features

• 30% lower Eoffcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:
(1) Parallel switching capability
(2) Moderate Eoffincrease with temperature
(3) Very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications
Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 41 A

4. Collector dissipation : Ptot = 250 W

5. Junction temperature : Tj = 150 °C (Tc = 25°C)

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Other data sheets are available within the file: SKW30N60HS

 

K30N60HS Datasheet PDF Download


K30N60HS pdf

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2N2222A Datasheet – 40V, 800mA, NPN Transistor

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This post explains for the transistor.

Part Number: 2N2222A

Function: Silicon Planar Epitaxial NPN Transistor

Package: TO-18

Manufacturer: STMicroelectronics

Image

2N2222A npn transistor

Description

This is 40V, 800mA, NPN Transistor.

The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.

2N2222A Pinout

2N2222A datasheet pinout

 

ABSOLUTE MAXIMUM RATINGS

1. Collector-Base Voltage (IE= 0) : VCBO = 75 V

2. Collector-Emitter Voltage (IB= 0) : VCEO = 40 V

3. Emitter-Base Voltage (IC= 0) : VEBO = 6 V

4. Collector Current : IC = 0.6 A

5. Collector Peak Current (tp< 5 ms) : ICM = 0.8 A

 

Reference Site

1. https://en.wikipedia.org/wiki/2N2222

2. https://www.onsemi.com/products/discrete-power-modules/general-purpose-and-low-vcesat-transistors

 

2N2222A Datasheet

2N2222A pdf


 

Other data sheets are available within the file:  2N2219A, 2N2222

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