K3667 Datasheet – 600V, 7.5A, N-Ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3667, 2SK3667

Function:  N-Channel MOSFET ( V dss, V dgr = 600V, Id = 7.5A, Pd = 45 W )

Package: TO-220 Type

Manufacturer: Toshiba

Image

K3667 image

Description

The is Silicon N Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON)= 0.75Ω(typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS= 100μA (VDS= 600 V)
4. Enhancement mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K3667 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3667 Datasheet


 

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B631K Datasheet – 120V, 1A, PNP Transistor – 2SB631K

This post explains for the Transistor.

The part number is 2SB631K, B631K

The function of this semiconductor is -120V, -1A, PNP Transistor.

The package is TO-126 Type.

Manufacturer: Sanyo Semicon Device

Images:

B631K datasheet

Description

The B631K is -120V, -1A, PNP Epitaxial Planar Silicon Transistor.

A PNP transistor is a type of bipolar junction transistor (BJT) that has a “positive-negative-positive” (PNP) configuration.

The term “PNP” refers to the polarities of the three regions in the transistor: the P-type base, the N-type collector, and the P-type emitter.

Features

1. High breakdown voltage VCEO 100/120V, High current 1A.

2. Low saturation voltage, excellent hFE linearity.

[…]

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 1A

5. Total Dissipation : Pc = 1W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Pinout

B631K pinout

 

Applications:

1. Low-Frequency Power Amplifier

B631K Datasheet PDF

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