Transistor archives - Page 547 of 2673

Features

1. IC＝100A VCES＝600V

2. VCE〔sat〕＝2.3V Typ

3. t f＝0.10μs Typ

4. Soft recovery diode

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 100 A

4. Total Power Dissipation : Pc = 400 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -40 to +125 °C

Applications:

1. Brake for motor control (chopper)

Other data sheets are available within the file: 100BA60

Part Number: STP30NF10, Marking : P30NF10

Function: N-channel, 100V, 35A, Low gate charge STripFET Power MOSFET

Package: TO-220 Type

Manufacturer: STMicroelectronics

Image

Description

The P30NF10 is N-channel, 100V, 35A, Power MOSFET.

This Power MOSFET is the latest development of STMicroelectronis unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features

1. Exceptional dv/dt capability

2. 100% avalanche tested

3. Application oriented characterization

4. Switching application

Pinout:

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 100 V
2. Gate to source Voltage: VGSS = ± 20 V
3. Drain current: ID = 35 A
4. Total Dissipation: Ptot = 115 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. HIGH-EFFICIENCY DC-DC CONVERTERS
2. UPS AND MOTOR CONTROL

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Description

Features

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P30NF10 Datasheet – N-ch, 100V, 35A, Power MOSFET – ST

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Features

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