Transistor

D9N40 Datasheet PDF – 400V, 8A, N-Ch MOSFET, AOD9N40

Posted on by pinout

art Number : D9N40

Function: 400V, 8A, N-Channel MOSFET

Package: DPak Type

Manufacturer: Alpha & Omega Semiconductors

Image:

D9N40

Description

The D9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), C issand Crss along  with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. – Alpha & Omega Semiconductors

D9N40-Detail

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Power Dissipation: Pd = 125 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

D9N40 Datasheet PDF


Official site : http://www.aosmd.com/, Datasheet PDF Download

Related articles across the web

IRF730 Datasheet PDF – 400V, 5.5A, N-Ch, MOSFET

Posted on by pinout

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRF730

Function: 400V, 5.5A, N-Channel MOSFET (Transistor )

Package: TO-220AB Type

Manufacturer: IRF, Vishay, NXP

Images:

IRF730 transistor datasheet

Description

This is 400V, 5.5A, HEXFET Power MOSFET.

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 5.5 A

4. Drain power dissipation : PD = 74 W

5. Single pulse avalanche energy : Eas = 290 mJ

6. Avalanche curren : Iar = 5.5 A

7. Repetitive avalanche energy : Ear = 7.4 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

Pinout

IRF730 pinout mosfet

Features

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Other data sheets are available within the file: IRF-730

IRF730 Transistor Datasheet

IRF730 pdf


 

Related articles across the web