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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: G7S313U, IRG7S313UPbF

Function : 330V, PDP Trench IGBT

Package: TO-263AB Type

Manufacturer: International Rectifier ( http://www.irf.com/ )

Image

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on)and low EPULSE rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.

Pinout

Features

1. Advanced Trench IGBT Technology

2. Optimized for Sustain and Energy Recovery circuits in PDP applications

3. Low VCE(on)and Energy per Pulse (EPULSE TM) for improved panel efficiency

4. High repetitive peak current capability

5. Lead Free package

G7S313U Datasheet

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Features

1. Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

[…]

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 359 mJ
6. Avalanche curren : Iar = 12 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature: Tch = °C
9. Storage temperature: Tstg = +150 °C

Applications:

1. Switching Regulator

Transistor

G7S313U Datasheet PDF – 330V, PDP Trench IGBT – IR

G7S313U Datasheet

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K12A600 PDF Datasheet – 600V, 12A, MOSFET ( TK12A60D )

Description

Features

K12A60D Datasheet