Part Number: BSS123

Function: 100V, 0.17A, N-Channel MOSFET

Package: SOT-23 type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

General Description

The BSS123 is N-Channel Logic Level Enhancement Mode Field Effect Transistor.

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

1. 0.17 A, 100 V. Rds(on) = 6Ω @ Vgs= 10 V, Rds(on) = 10Ω @ Vgs= 4.5 V

2. High density cell design for extremely lowRDS(ON)

3. Rugged and Reliable

4. Compact industry standard SOT-23 surface mount package

 

Absolute Maximum Ratings

1. Drain-Source Voltage : VDSS = 100 V

2. Gate-Source Voltage : VGSS = ±14 V

3. Drain current: ID = 0.17 A

4. Total Power Dissipation: Pd = 0.36 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

BSS123 Datasheet PDF Download

Other data sheets are available within the file: BSS-123, BSS100