C4140 Transistor Datasheet – 400V, 18A, NPN – Sanken

Part Number: C4140, 2SC4140

Function:  400V, 18A, NPN Transistor

Package: MT-100(TO3P) Type

Manufacturer: Sanken, SavantIC

Image:

C4140 Transistor sanken

Description

C4140 is 400V, 18A, Silicon NPN Triple Diffused Planar Transistor.

This is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

:

Features

1. High Voltage

2. High Speed Switching Transistor

Pinout:

c4140 pinout datasheet

Absolute Maximum Ratings

1. Collector-base voltage : Vcbo = 500 V

2. Collector-emitter voltage : Vceo = 400 V

3. Emitter-base voltage : Vebo = 10 V

4. Collector current : Ic = 18 A

5. Collector power dissipation : Pc = 130 W

Applications:

1. Switching Regulator and General Purpose

 

C4140 Transistor Datasheet PDF


 

Related articles across the web

Posts related to ‘ NPN Transistor ‘

Part number Description
D2394 60V, 3A, NPN Transistor – Rohm
2SD1651 1500V, 5A, 50W, NPN Transistor
MJE13001 400V, NPN Transistor
2SC3807 30V, 2A, NPN Silicon Transistor
BC140 40V, 1A, Power NPN Transistor
C1740 0.15A , 60V NPN Transistor – Semtech
C5440 600V, 15A, NPN Transistor, 2SC5440
1803DHI Vcbo=1500V, NPN Power Transistor – ST
C4429 800V, 8A, NPN Transistor – 2SC4429
C2229 150V, 50mA, NPN Transistor – 2SC2229

 

K3868 PDF Datasheet – 500V, 5A, N-ch, MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K3868, 2SK3868.

The function of this semiconductor is 500V, 5A, N-channel MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

1 page ( Pinouts: 1. Gate, 2. Drain, 3 Source )
K3868 transistor pinout

Description

K3868 is 500V, 5A, Silicon N-Channel MOS Type Field Effect Transistor.

 

Features

1. Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Drain Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2 page
K3868 pdf datasheet

Applications:

1. Switching Regulator

K3868 PDF Datasheet

Posts related to ‘ 500V MOSFET ‘

Part number Description
K2698 500V, 15A, N-Channel, MOSFET – 2SK2698
MDF5N50F 500V, 4.5A, N-Ch, MOSFET
STW45NM50FD 500V, 45A, MOSFET
13N50CF 500V, 15A, MOSFET
2SK2019-01 500V, 3.5A, N-Ch, MOSFET
NT407F 1500V / 5A / 60W, MOSFET – Panasonic
K3934 500V, 15A, N-ch, MOSFET – Toshiba
08N50E 500V, N-ch, 7.5A, MOSFET, Fuji
FDPF16N50UT 500V, 15A, N-Ch, MOSFET