Transistor archives - Page 68 of 2673

This post explains for the IGBT.

The Part Number is K30N60HS, SKW30N60HS.

The function of this semiconductor is 600V, 30A, IGBT.

The package is TO-247-3 Type

Manufacturer: Infineon

Preview images :

K30N60HS datasheet igbt

Description

The K30N60HS is High Speed IGBT in NPT-technology. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• 30% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers :

– parallel switching capability

– moderate Eoff increase with temperature

– very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications

• Complete product spectrum and PSpice Models

1 page
K30N60HS pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-emitter voltage : Vce = 600 V

2. DC collector current = 30 A (Tc = 25°C)

3. Power dissipation : Ptot = 250 W

4. Operating junction and storage temperature : Tj, Tsg = -55 ~ +150°C

K30N60HS PDF Datasheet

Posts related to ‘ 600V IGBT ‘

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Description

K10A60D is Silicon N Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K10A60D Datasheet PDF