Semiconductor Informations
Part Number: C33725
Package: TO 92 Type
Manufacturer: NXP, Philips, Fairchild
Function: 45 V, 500 mA, NPN Epitaxial Silicon Transistor
2SC33725 -> Correct Part Number: BC33725
The BC337-25 is Marked C33725.
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Features
1. High current
2. Low voltage
Quick reference data
1. Collector-emitter voltage : Vceo = 45 V
2. collector current (DC) : Ic = 500 mA
Applications
1. General-purpose switching and amplification
This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K12A60U, TK12A60U
Function: 600V, 12A, Silicon N Channel MOSFET
Package: TO-220SIS, SC-67 Type
Manufacturer: Toshiba
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Description
The TK12A60U is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba.
It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.
The K12A60U has a maximum drain-source voltage of 600V and a maximum drain current of 12A,
making it suitable for high voltage, high current applications.
1. Low drain-source ON-resistance : RDS (ON) = 0.36 Ω (typ.)
2. High forward transfer admittance : ⎪Yfs⎪ = 7.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 35 W
5. Single pulse avalanche energy : EAS = 69 mJ
6. Avalanche current : IAR = 12 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
Applications:
1. Switching Regulator
Official Homepage: https://toshiba.semicon-storage.com/
