Transistor

D5702 Datasheet – 600V, 6A, NPN, Transistor – 2SD5702 ( PDF )

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Part Number: D5702

Function: 600V, 6A, NPN, Transistor

Package: TO-3P Type

Manufacturer: SavantIC Semiconductor

Image and Pinouts:
D5702 datasheet

Description

This is Silicon NPN Power Transistor.

Features

1. With TO-3P(H)IS package
2. Built-in damper diode
3. High voltage ,high speed

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 6 A
5. Total Dissipation : Pc = 60 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. For color display horizontal deflection output applications

Other data sheets are available within the file: 2SD5702

D5702 Datasheet PDF Download

D5702 pdf

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K2611 Datasheet PDF – 900V, 9A, MOSFET, Transistor

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2611, 2SK2611

Function: 900V, 9A, N-Channel MOSFET

Package: TO-247

Manufacturer: WinSemi Microelectronics

Image and Pinouts:

K2611 datasheet

 

Description

This is 900V, 9A, Silicon N-Channel MOSFET.

This N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

1. 9A, 900V, RDS(on) (Max1.10Ω) @VGS=10V
2. Ultra-low Gate charge (Typical 72nC)
3. Fast Switching Capability
4. 100% Avalanche Tested
5. Maximum Junction Temperature Range (150 ℃)

 

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 900 V
2. Drain current: ID = 9 A
4. Drain power dissipation : PD = 300 W
5. Single pulse avalanche energy : Eas = 1000 mJ
6. Repetitive avalanche energy : Ear = 30 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = -55 to +150 °C

Q1: How do I protect a MOSFET transistor from overvoltage or overcurrent?
A1: To protect a MOSFET transistor from overvoltage, a voltage clamping device such as a zener diode or TVS diode can be used. To protect against overcurrent, a fuse or current limiting device can be used. Careful consideration of the device’s specifications and the application’s requirements is essential for e

Other data sheets are available within the file: 2SK2611

K2611 Datasheet PDF Download

K2611 pdf