G4PC50UD Datasheet PDF – 600V, 27A, UltraFast IGBT – IR

Part Number: G4PC50UD, IRG4PC50UD

Function : 600V, 27A, IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image

g4pc50ud-igbt

Description

This is 600V, 27A, UltraFast CoPack IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

4. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

 

Pinout

g4pc50ud-datasheet-pinout

 

Benefits

1. Generation 4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 27 A (Tc = 100°C)

4. Maximum Power dissipation : Pc = 200 W (Tc = 25°C)

5. Operating Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PC50UD Datasheet PDF


 

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2SB772 Datasheet PDF – 30V, 3A, PNP Transistor – UTC

Part Number: 2SB772

Function: -30V, -3A, PNP Transistor

Package : TO-126, TO-92 Type

Manufacturer: Unisonic Technologies

Image and Pinouts:

2SB772 datasheet

 

Description

This is -30V, -3A, PNP Silicon Transistor. The transistor is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

The operation of a PNP transistor is based on the biasing of its three layers: the emitter, base, and collector. The emitter is connected to the positive power supply, the base is the control terminal, and the collector is connected to the load or circuit.

When a small current flows into the base terminal, it controls a larger current flowing between the emitter and collector. The transistor amplifies the input signal and can be used to switch larger currents on and off in various electronic circuits.

Silicon PNP transistors offer advantages such as high gain, low noise, and good thermal stability. They are widely used in many applications, including audio amplifiers, power supplies, voltage regulators, and digital logic circuits.

Features

1. High current output up to 3A

2. Low saturation voltage

3. Complement to 2SD882

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Base Voltage : VCBO = – 40 V

2. Collector-Emitter Voltage : VCEO = – 30 V

3. Emitter-Base Voltage : VEBO = – 7 V

4. Collector Current DC : IC = – 3 A

5. Base Current : Ib = – 0.6 A

components

Related Posts

Other data sheets are available within the file: B772, 2SB772X-T60-K, 2SB772X-T6C-K, 2SB772X-T9N-B

2SB772 Datasheet PDF

2SB772 pdf

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