G60N100 Datasheet – 1000V, 60A, NPT Trench IGBT

Part Number: G60N100, FGL60N100BNTD, G60N100BNTD

Function :  1000V, 60A, NPT Trench IGBT

Package: TO-264 3L Type

Manufacturer: Fairchild, ON Semiconductor

Image
G60N100 mosfet
Description

This is 1000V, 60A, NPT Trench IGBT.

Using Fairchild’s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

Pinout for G60N100

G60N100 datasheet pdf pinout

Features

1. High Speed Switching
2. Low Saturation Voltage: VCE(sat) = 2.5 V @ IC= 60 A
3. High Input Impedance
4. Built-in Fast Recovery Diode

Applications

1. Uninterruptible Power Supply
2. Other Industrial

Official Homepage

https://www.onsemi.com/products/discretes-drivers/igbts/fgl60n100bntd

G60N100 Datasheet


 

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Part Number: 2N650

Function: 45V, PNP Transistor.

Package: TO-5 Type

Manufacturer: New Jersey Semiconductor, Motorola

Images:

2N650 datasheet pinout

Description

The 2N650 designed primarily for low-power audio amplifer and medium-speed switching applications.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Emitter Voltage: Vceo = 45 V
2. Emitter to Base Voltage: Vebo = 30 V

[…]

 

2N650 Datasheet

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