Transistor archives - Page 755 of 2673

Features

1. High fT: fTtyp=2.0GHz.

2. High current : IC=500mA.

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 30 V

2. Collector-to-Emitter Voltage : VCEO = 20 V

3. Emitter-to-Base Voltage : VEBO = 3 V

4. Collector Current : IC = 500 mA

5. Collector Current (Pulse) : ICP = 1000 mA

6. Collector Dissipation : PC = 1.2 W

Applications:

1. Ultrahigh-definition CRT display.

2. Video output driver.

3. Wideband amplifiers.

Other data sheets are available within the file: C3595

Part Number: K3797, 2SK3797

Function: N-Channel MOSFET ( Vdss = 600V, Vdgr = 600V )

Package: TO-220 type

Manufacturer: Toshiba Semiconductor

Image

Description

This is 600V, 30A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Low drain-source ON resistance: RDS (ON)= 0.32Ω(typ.)

2. High forward transfer admittance: |Yfs| = 7.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 600 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator