Transistor

D2499 Transistor – 600V, 6A, NPN, Equivalent, 2SD2499 PDF

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Part Number: 2SD2499

Function: 600V, 6A, NPN Transistor

Package: TO-3P Type

Manufacturer: Toshiba Semiconductor

Images:

D2499 transistor pdf

 

Description

D2499 is 600V, 6A, Silicon NPN Transistor. 

 

Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

3. High Speed : tf = 0.3 μs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

D2499 pdf pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. Horizontal Deflection Output For Color TV

D2499 PDF Datasheet

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07N60C3 PDF Datasheet – 650V, 7.3A, Power MOSFET

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This post explains for the MOSFET.

The Part Number is 07N60C3.

The function of this semiconductor is 650V, 7.3A, Power Transistor.

The package is PG-TO220FP, PG-TO262, PG-TO220.

Manufacturer: Infineon

Preview images :

1 page
07N60C3 pdf pinout

Description

07N60C3 is 650V, 7.3A, Cool MOS Power Transistor. “CoolMOS” is a brand name for a series of high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices developed and manufactured by Infineon Technologies. CoolMOS is known for its advanced technology and design features that make it suitable for a wide range of power electronics applications.

Features

1. New revolutionary high voltage technology

2. Ultra low gate charge

3. Periodic avalanche rated

4. Extreme dv/dt rated

5. High peak current capability

6. Improved transconductance

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 7.3 A

4. Power Dissipation : Ptot = 83 W (Ta = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

07N60C3 datasheet

1. High Efficiency: CoolMOS transistors are designed to have low on-state resistance (RDS(on)) and low switching losses, which results in high efficiency. This high efficiency is crucial in power electronics applications to minimize energy wastage and heat generation.

2. Fast Switching: They have fast switching speeds, making them suitable for applications requiring rapid switching, such as switching power supplies and motor control.

3. Low Capacitance: CoolMOS devices typically have low input and output capacitance, which reduces switching losses and improves high-frequency performance.

 

Other data sheets are available within the file:

SPP07N60C3 SPI07N60C3, SPA07N60C3, Q67040-S4400, Q67040-S4424, SP000216303

07N60C3 PDF Datasheet