Transistor

C4106 Datasheet PDF – 400V, 7A, NPN Transistor, 2SC4106

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Part Number: C4106

Function: 400V, 7A, NPN Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

C4106 datasheet

 

Description

C4106 is 400V, 7A, NPN Triple Diffused Planar Silicon Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

:

Features

1. High breakdown voltage and high reliability.

2. Fast switching speed.

3. Wide ASO.

4. Adoption of MBIT process.

Test Circuit :

C4106 Circuit

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 7 A

5. Total Dissipation : Pc = 1.75 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Switching Regulator

Other data sheets are available within the file:  2SC4106

C4106 Datasheet PDF

C4106 pdf

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K20A60U PDF – N-Channel, 600V, 20A, MOSFET, TK20A60U

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: TK20A60U

Marking Number : K20A60U

Function: 600V, 20A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K20A60U transistor mosfet

Description

K20A60U is 600V, 20A, Silicon N Channel MOS Type Transistor(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

1 page
mosfet K20A60U pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain power dissipation : PD = 45 W

5. Single pulse avalanche energy : Eas = 144 mJ

6. Avalanche curren : Iar = 20 A

7. Repetitive avalanche energy : Ear = 4.5 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

 

K20A60U PDF Datasheet

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