Transistor

SVF12N60F Datasheet PDF – 600V, 12A, N-Channel MOSFET

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Part Number: SVF12N60F

Function : 12A, 600V, N-Channel MOSFET

Package :  TO-220F-3L Pin Type

Manufacturer: Silan Microelectronics

Image

SVF12N60F datasheet mosfet
Description

The SVF12N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Pinout

SVF12N60F pinout
Features

1. 12A, 600V, RDS(on)(typ)=0.58Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Absolute maximum ratings ( Tc=25°C )

1. Drain-Source Voltage : VDS = 600 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : ID = 12 A
4. Drain Current Pulsed : IDM = 48 A
5. Power Dissipation: Pd = 51 W
6. Operation Junction Temperature Range : TJ = -55～+150 °C
7. Storage Temperature Range : Tstg = -55～+150 °C

Other data sheets are available within the file: SVF12N60, SVF12N60S, SVF12N60K

SVF12N60F Datasheet PDF

SVF12N60F pdf


 

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2SA1289 Transistor – Sanyo, -60V, -5A, PNP ( Datasheet PDF )

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Part Number: 2SA1289

Function: -60V, -5A, PNP Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SA1289 datasheet

Description

This is -60V, -5A, PNP Epitaxial Planar Silicon Transistor.

The 2SA1289 is a PNP bipolar junction transistor (BJT) manufactured by Sanyo.

BJTs are widely used as amplifiers and switches in a variety of electronic circuits, including audio amplifiers, power amplifiers, and switching regulators.

Features

1. Low saturation voltage.

2. Excellent current dependence of hFE.

3. Short switching time.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 80 V

2. Collector to Emitter Voltage: Vceo = – 60 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 5 A

5. Collector Dissipation : Pc = 30 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Various inductance lamp drivers for electrical equipment.

2. Inverters, converters (strobo, flash, fluorescent lamp lighting circuit).

3. Power amp (high power car stereo, motor controller).

4. High-speed switching (switching regulator, driver).

 

2SA1289 Datasheet PDF Download


2SA1289 pdf

Other data sheets are available within the file: A1289, 2SC3253, C3253