Part Number: K2481

Function: 900V, 4A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Package: TO-220 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

 

Description

The K2481 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Renesas Electronics.

It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The 2SK2481 has a maximum drain-source voltage of 900V and a maximum drain current of 4A,
making it suitable for high voltage, high current applications.

 

Features

1. Low On-Resistance : RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)

2. Low Ciss Ciss = 900 pF TYP.

3. High Avalanche Capability Ratings

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 v

3. Drain current: ID = 4 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK2481

 

K2481 Datasheet PDF Download