Part Number: BLF245

Function: VHF power MOS transistor

Package: SOT123A, Flanged ceramic package; 2 mounting holes; 4 leads

Manufacturer: NXP Semiconductors.

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Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange.

Matched gate-source voltage (VGS) groups are available on request.

Pinout:

1. drain  2. source  3. gate  4. source

 

 

Features

1. High power gain

2. Low noise figure

3. Easy power control

4. Good thermal stability

5. Withstands full load mismatch.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 6 A
4. Total Power Dissipation : Ptot = 68 W
5. junction temperature : Tch = 200 °C
6. Storage temperature: Tstg = -65 to +150 °C

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BLF245 Datasheet PDF Download

Other data sheets are available within the file:  BLF-245