Transistor

RJH60F5DPQ-A0 Datasheet PDF – 600V, 40A, IGBT

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Part Number: RJH60F5DPQ-A0

Function: 600V – 40A – IGBT, High Speed Power Switching

Package: TO-247A type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJH60F5DPQ-A0 datasheet

Description

This is 600V, 40A, IGBT.

Features

1.  Low collector to emitter saturation voltage :
Vce(sat)= 1.37 V typ. (Ic= 40A, Vge= 15 V, Ta = 25°C)

2.  Built in fast recovery diode in one package

3.  Trench gate and thin wafer technology

4.  High speed switching :
tr= 85 ns typ. (at IC= 30 A, VCE= 400 V, VGE= 15 V, Rg = 5 , Ta = 25°C, inductive load)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : ID = 80 A (Tc = 25°C)

4. Collector dissipation : PC = 260.4 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

RJH60F5DPQ-A0 Datasheet PDF Download


RJH60F5DPQ-A0 pdf

Other data sheets are available within the file: RJH60F5, RJH60F5DPQ-A0, RJH60F5DPQ-A0-T0

FQP10N20C Datasheet PDF – 200V, 9.5A, N-Ch, MOSFET

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Part Number: FQP10N20C

Function: 200V, 9.5A, N-Channel QFET MOSFET

Package: TO-220, TO-220F

Manufacturer: Fairchild Semiconductor

Image :

FQP10N20C datasheet

 

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features

1. 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V

2. Low gate charge ( typical 20 nC)

3. Low Crss ( typical 40.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9.5 A
4. Power Dissipation: Pd = 72 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

FQP10N20C Datasheet PDF Download


FQP10N20C pdf

Other data sheets are available within the file: 10N20C, FQP10N20C, FQPF10N20C