Transistor archives - Page 854 of 2673

Description

The RJH3044 is a silicon N channel IGBT. It has high speed power switching.

Parametrics

Absolute maximum ratings:

(1) collector to emitter voltage : 360V
(2) Gate to emitter voltage : ±30V
(3) collector current : 30A
(4) collector peak current : 200A
(5) collector to emitter diode forward peak current : 100A
(6) collector dissipation : 20W
(7) junction temperature : 150℃
(8)storage temperature : -55 to 150℃.

Features

(1) trench gate and thin wafer technology;
(2) high speed switching;
(3) low collector to emitter saturation voltage;
(4) low leak current;
(5) built-in fast recovery diode;
(6) isolated package.

Part Number: BF494

Function: NPN Medium Frequency Transistor

Package: TO-92, SOT-54 Package

Manufacturer: Philips, NXP

Image

BF494 NPN transistor

Description

This is 20V, 30mA, NPN Transistor.

This is NPN medium frequency transistor in a TO-92, SOT54 plastic package.

Pinout

BF494 datasheet pinout
Features

1. Low current (max. 30 mA)
2. Low voltage (max. 20 V).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Total Device Dissipation: Pd = 350 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. HF applications in radio and television receivers
2. FM tuners
3. Low noise AM mixer-oscillators
4. IF amplifiers in AM/FM receivers.

Transistor

RJH3044 Datasheet PDF – 360V, 30A, IGBT – Renesas

Description

RJH3044 Datasheet

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BF494 Datasheet PDF – NPN Frequency Transistor – NXP

Description

BF494 Datasheet

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