Transistor

K3568 PDF – 500V, 12A, N-channel MOSFET – Toshiba

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What is K3568?

This post explains for a silicon N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in high-speed power switching applications.

The Part Number is 2SK3568.

The function of this semiconductor is 500V, 12A, N-Channel MOSFET.

The package is TO-220 type

Manufacturer: Toshiba Semiconductor

Image

K3568 pdf toshiba

Description

K3568 is 500V, 12A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Can handle high-frequency signals

2. Low conduction losses

3. Can operate at high temperatures

4. High reliability and long lifespan

5. May require heat sinking in high-power applications

6. More expensive than some other types of MOSFETs

7. May be susceptible to damage from electrostatic discharge (ESD)

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Preview images :

K3568 transistor datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulator

K3568 PDF Datasheet

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C5478 PDF Datasheet – 900V, 50mA, NPN Transistor – Sanyo

Posted on by pinout

This post explains for the Transistor.

The Part Number is 2SC5478.

The function of this semiconductor is 900V, 50mA, NPN Transistor.

The package is TO-220AB type

Manufacturer: Sanyo Semicon Device

Preview images:

C5478 transistor datasheet

Description

This is 900V, 50mA, NPN Triple Diffused Planar Silicon Transistor.

C5478 Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features:

1. High breakdown voltage

2. Small Cob

3. Wide ASO

4. High reliability ( Adoption of HVP process )

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1700 V

2. Collector to Emitter Voltage: Vceo = 900 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 50 mA

5. Collector Dissipation : Pc = 1.75 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C5478 PDF Datasheet