K3568 PDF – 500V, 12A, N-channel MOSFET – Toshiba

What is K3568?

This post explains for a silicon N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in high-speed power switching applications.

The Part Number is 2SK3568.

The function of this semiconductor is 500V, 12A, N-Channel MOSFET.

The package is TO-220 type

Manufacturer: Toshiba Semiconductor

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Description

K3568 is 500V, 12A, Silicon N-Channel MOS Type Field Effect Transistor.

1. Can handle high-frequency signals

2. Low conduction losses

3. Can operate at high temperatures

4. High reliability and long lifespan

5. May require heat sinking in high-power applications

6. More expensive than some other types of MOSFETs

7. May be susceptible to damage from electrostatic discharge (ESD)

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Preview images :

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulator

K3568 PDF Datasheet

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