K3568 PDF – 500V, 12A, N-channel MOSFET – Toshiba

What is K3568?

This post explains for a silicon N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in high-speed power switching applications.

The Part Number is 2SK3568.

The function of this semiconductor is 500V, 12A, N-Channel MOSFET.

The package is TO-220 type

Manufacturer: Toshiba Semiconductor

Image

K3568 pdf toshiba

Description

K3568 is 500V, 12A, Silicon N-Channel MOS Type Field Effect Transistor.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

1. Can handle high-frequency signals

2. Low conduction losses

3. Can operate at high temperatures

4. High reliability and long lifespan

5. May require heat sinking in high-power applications

6. More expensive than some other types of MOSFETs

7. May be susceptible to damage from electrostatic discharge (ESD)

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Preview images :

K3568 transistor datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 12 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching Regulator

K3568 PDF Datasheet

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