MJE3055 Datasheet – 60V, 10A, NPN, Transistor ( PDF )

The Part Number is MJE3055, MJE3055T, MJE2955T.

The Function is 60A, 10A, NPN Transistor

The package is  TO-220 Package type

Manufacturer: Fairchild, STMicroelectronics

Images:

MJE3055 datasheet pdf

Description

This is NPN Silicon Transistor. The MJE3055 is a silicon Epitaxial-Base NPN
transistor in Jedec TO-220 package. It is intended for power switching circuits and
general-purpose amplifiers.

Features

1. DC Current Gain Specified to IC =10A
2. High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 70 V
2. Collector to Emitter Voltage: Vceo = 60 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 10 A
5. Total Dissipation : Pc =75 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Pinout

MJE3055 transistor pinout

Applications:

1. General Purpose and Switching

MJE3055 Datasheet

MJE3055 pdf

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K3155 Datasheet PDF – 150V, 15A, N-Ch, MOSFET

Part Number: K3155, 2SK3155

Function: 15A, 150V, Silicon N Channel MOSFET

Pakcage : TO-220FM Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K3155 datasheet

 

Description

This is 15A, 150V, MOSFET.

Features

1. Low on-resistance :  RDS= 100 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 15 A
4. Drain peak current : ID(pulse) = 60 A
5. Body-drain diode reverse drain current : IDR = 15 A
6. Avalanche current : IAP = 15 A
7. Avalanche energy : EAR = 16 mJ
8. Channel dissipation: Pch = 30 W

Application

1. High Speed Power Switching

Other data sheets are available within the file: 2SK3155

 

K3155 Datasheet PDF Download


K3155 pdf