Part Number : K6A650, Correct Part Number : K6A65D, TK6A65D
Function : 650V, N-Channel MOSFET
Package : TO-220 Type
Manufactures : Toshiba Semiconductor
Images :
Description :
1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Applications
Switching Regulator
Pinout :
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 650 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain power dissipation (Tc = 25°C) : PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = +150 °C
K6A65D Datasheet
