Part Number: K6A650, Correct Part Number: K6A65D, TK6A65D
Function: 650V, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description:
1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Applications
Switching Regulator
Pinout:
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = +150 °C
K6A65D Datasheet
