Part Number: RJP56F4, RJP56F4A
Function: 200A, 430V, N-Channel IGBT for Strobe Flash
Package: TO-220FN Type
Manufacturer: Renesas
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Description
RJP56F4A is 430V, 200A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that is generally applied as
controlled switch in power electronics circuits. The IGBT transistor is suitable for switching speeds of up to 100 KHz (in some cases less than 100KHz). Its switching is high speed.
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features:
1. Package: TO-220FN.
2. Dissipation Power : 3W and maximum dissipation of 30W.
3. Supply voltage: 4.75V to 5.25V.
4. Collector-Emitter Voltage : 430V.
5. Collector current : 200A.
6. Gate-emitter voltage: ± 33V.
7. Operating temperature : -50 ° C to 150 ° C
RJP56F4A PDF Datasheet
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