Part Number: 2N6029
Function: 100V, 16A, Complementary Silicon Power Transistor
Package: TO-3 Case Type
Manufacturer: Central Semiconductor
Image and Pinouts:
Description
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 100 V
2. Collector to Emitter Voltage: Vceo = 100 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 16 A
5. Collector Dissipation: Pd = 200 W
6. Junction Temperature: Tj = 200°C
7. Storage Temperature: Tsg = -65 ~ +200°C
Other data sheets are available within the file: 2N5629, 2N5630, 2N6030
2N6029 Datasheet PDF Download
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