Part Number: GT30F124
Function: Discrete 300V, 200A, IGBT ( Insulated-Gate Bipolar Transistor )
Package: TO-220SIS Type
Manufacturer: Toshiba
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Description
IGBT 30F124 is a high voltage and high current Insulated Gate Bipolar Transistor (IGBT) used for power electronics applications. It is commonly used for motor control, AC/DC conversion, and power switching applications due to its high voltage and current rating, fast switching speed, and low losses. It has a maximum voltage rating of 300V and a maximum current rating of 200A, making it suitable for medium to high power applications. IGBTs are widely used in various applications, including power electronics, motor drives, renewable energy systems, and electric vehicle inverters.
Features of the Toshiba Discrete IGBT
The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
30F124 Transistor ( 300V 200A IGBT )
Applications
(1) Plasma display panels
Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.
IGBTs are commonly used in power conversion systems, such as inverters, where they switch high currents on and off rapidly to convert DC power to AC power or vice versa.
Pinout
Other data sheets are available within the file: 3OF124, GT3OF124
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Download 30F124 Datasheet PDF
