G80N60UFD PDF Datasheet – 600V, 80A, IGBT – Fairchild

This post explains for the IGBT.

The Part Number is G80N60UFD, SGH80N60UFD.

The function of this semiconductor is 600V, 80A, Ultrafast IGBT.

The package is TO-3P Type

Manufacturer: Fairchild Semiconductor

Preview images :

1 page
transistor G80N60UFD pdf datasheet

Description

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60UFD stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

G80N60UFD igbt pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Collector dissipation : Pd = 195 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

G80N60UFD PDF Datasheet

Posts related to ‘ IGBT ‘

Part number Description
10N120BND 10N120BND PDF – 1200V, 35A, IGBT – HGTG10N120BND
IRG4PC50S 600V, 70A, IGBT, Transistor
RJP2557DPK 270V, 50A, IGBT, TO-3P
RJP30H2DPK-M0 360V, 35A, N-ch, IGBT
7MBR10VKA060-50 IGBT, 600V, 10A
NCE15G135T 1350V, 15A, Trench NPT IGBT – NCE
45G131 400V, 200A, IGBT – Toshiba
DG3C3020CL 330V, 45A, IGBT – Panasonic
FGA25N120 1200V, 25A, IGBT – Fairchild
G4PH40UD G4PH40UD PDF – 1200V, 21A, IGBT – IRG4PH40UD

 

GA5210PL PDF Datasheet – Toaster Control IC

Part Number: GA5210PL

Function: CMOS Process / Toaster Control IC

Package: DIP 8 Pin Type

Manufacturer: Siyang Microelectronics

Images:

1 page
GA5210PL pdf pinout

Description

The GA5210PL is manufactured by CMOS technology, and it is a cost-effective ASIC specially developed for toasters. A Toaster Control IC (Integrated Circuit) is a component used in the control and operation of toaster appliances. These ICs are designed to manage the toasting process and ensure that the bread or other items placed in the toaster are toasted to the desired level of brownness or crispiness.

The GA5210PL upgrades the original GA5210P, Reheat and Defrost pins have built-in pull-up resistors, external components less.

Features

1. Chip operating voltage 3.3V~5.1V

2. Support two heating modes of single-side and double-side baking

3. The chip has temperature compensation function

4. The timing of the toaster is determined by the resistance and capacitance of the external pins,

5. the timing range is wide, and the user can

6. Make adjustments.

 

2 page
GA5210PL datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Storage temperature : -40℃ to +125℃

2. Working ambient temperature : 0℃ to +85℃

3. Power supply voltage : 2.8V ~ 5.5V

4. DC output current : 20mA

5. Power consumption : 500mW

 

Application:

1. Multifunctional toaster

GA5210PL PDF Datasheet

Related articles across the web