D2586 PDF Datasheet – 600V, 5A, NPN, Transistor, 2SD2586

This post explains for the transistor.

Part Number: D2586, 2SD2586

Function: 600V, 5A, NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

D2586 datasheet

 

Description

The D2586 is 600V, 5A, NPN Transistor. 

 

Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

3. High Speed : tf = 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

Pinouts:

D2586 transistor pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo =5 V

4. Collector Current: Ic = 5 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

D2586 replacement

Applications

1. HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

D2586 PDF Datasheet

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40NO3GP PDF Datasheet – 30V, 40A, N-ch, Power MOSFET

Part Number: 40NO3GP, 40N03GP

Function: 30V, 40A, N-channel, Power MOSFET

Package: TO-220 Type

Manufacturer: Advanced Power Electronics

Images:

1 page
40NO3GP pdf datasheet

Description

The 40NO3GP is 30V, 40A, N-channel Enhancement-mode Power MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.

 

Features

1. Low Gate Charge

2. Simple Drive Requirement

3. Fast Switching Characteristic

3 page
40NO3GP transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: AP40N03GP, AP40NO3GP, AP40N03GP

40NO3GP PDF Datasheet

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