G4PF50WD PDF Datasheet – N-Ch, 900V, 51A, IGBT

This post explains for the IGBT.

The Full Part Number is G4PF50WD, IRG4PF50WD.

The package is TO-247AC type.

The function of this semiconductor is 900V, 51A, Insulated-Gate Bipolar Transistor.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

1 page
G4PF50WD pinout igbt

Description

G4PF50WD is 900V, 51A, Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

6. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

 

G4PF50WD pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PF50WD PDF Datasheet

Posts related to ‘ IGBT ‘

Part number Description
RJH30E2 360V, 30A, IGBT ( PDF ) – Renesas
IXGH60N60C3 600V, 60A, IGBT, Transistor
RJP3053DPP IGBT, 300V, 30A, Transistor
GB6B60KD 600V, 13A, IGBT, Transistor
RJH30H2DPK-M0 360V, N-Ch, IGBT
7MBR35SB-120 1200V, 35A, IGBT Module
1MBH25-120 1200V, 25A, IGBT, Transistor
G160N60 Fairchild, 600V, 160A, IGBT
30J124 600V, 200A, IGBT – Toshiba
G40N60UFD G40N60UFD PDF – FGA40N60UFD, 600V, IGBT

 

Infineon
IRG4PF50WDPBF
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
Powered by Octopart