G4PF50WD Datasheet – N-Ch, 900V, 51A, IGBT – IRG4PF50WD

This post explains for the IGBT.

The Full Part Number is G4PF50WD, IRG4PF50WD.

The package is TO-247AC type.

The function of this semiconductor is 900V, 51A, Insulated-Gate Bipolar Transistor.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

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G4PF50WD datasheet image


This is 900V, 51A, Insulated-Gate Bipolar Transistor.


1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

6. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses



Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


G4PF50WD Datasheet PDF