K4A60DA PDF Datasheet – 600V, 3.5A, N-Ch, MOSFET

Part Number: K4A60DA, TK4A60DA

Function: 600V, 3.5A, N-Channel, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba


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transistor K4A60DA pdf datasheet


K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


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mosfet K4A60DA equivalent


1. Switching Regulator


K4A60DA PDF Datasheet

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