What is K6A600?
K6A60D is the correct part name. The K6A600 MOSFET is an N-channel device with a maximum drain-source voltage rating of 600 volts and a maximum continuous drain current rating of 6 amperes. It has a low on-resistance and fast switching speed, making it suitable for high-power switching applications.
Marking Code: K6A600, TK6A600
Corrector number : K6A60D, TK6A60D
Function: 600V, 6A, N-Channel MOSFET
Pacakage : TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
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Description
This is Silicon N-Channel MOS Type Field Effect Transistor. The K6A600 MOSFET is commonly used in electronic circuits that require high voltage and high current, such as power supplies, motor control circuits, and lighting systems.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
K6A600 PDF Datasheet
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