K80E08K3 PDF Datasheet – 75V, N-Ch, MOSFET – TK80E08K3

This post explains for the MOSFET.

The Full Part Number is TK80E08K3.

The function of this semiconductor is 75V, 80A, Silicon N-Channel MOSFET.

The package is TO-220AB Type.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K80E08K3 mosfet datasheet

Description

The K80E08K3 is 75V, 80A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. E-Bike/UPS/Inverter

2. Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)

3. High forward transfer admittance : |Yfs| = 135 S (typ.)

4. Low leakage current : IDSS = 10 μA (max) (VDS = 75 V)

5. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K80E08K3 pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 75 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 75 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain current : Id = 80 A

5. Drain power dissipation (Tc = 25°C): PD = 200 W

6. Single pulse avalanche energy(Note 2) : EAS = 107 mJ

7. Avalanche current : IAR = 40 A

8. Repetitive avalanche energy (Note 3) : EAR = 20 mJ

9. Peak diode recovery dv/dt (Note 5) : dv/dt = 12 V/ns

10. Channel temperature (Note 4) : Tch = 175 °C

K80E08K3 PDF Datasheet

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