RJP30H2A PDF Datasheet – 360V, N-Ch, IGBT, Transistor

This post explains for the IGBT.

The Part Number is RJP30H2A, RJP30H2DPK-M0.

The package is TO263-3L, D2PAK, TO-3P

The function of this semiconductor is Silicon N Channel IGBT.

Manufacturer: Renesas

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RJP30H2A pdf datasheet


RJP30H2A is 360V, 35A, Silicon N Channel IGBT.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.


1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES = 1 μA max


Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 60 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



1. High speed power switching


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RJP30H2A replacement

RJP30H2A PDF Datasheet

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