igbt

RJP30E4 Datasheet PDF – 360V, 35A, IGBT, TO-263 Type

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Part Number: RJP30E4, RJP30E4DPE

Function: Si-N IGBT, 360V, 35A, (200App) 75W Tf

Image: TO-263 Package

Manufacturer: Panasonic, Renesas

Image

RJP30E4

Description

RJP30E4 is 360V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. RJP30E4 TRANSISTOR, B1JBEN000002 Transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage (VCES) : 360 V

2. Collector Current (IC) ; 40 A

3. Collector Current Pulsed (IC(peak)) : 250A

4. Gate-Emitter Voltage (VGES) : +-30V

5. Power Dissipation (PD) : 30 W

Applications:

1. High Speed Power Switching

RJP30E4 Datasheet

Reference Datasheet PDF RJP30E3

http://www.electronica-usa.com/graphics/RJP30E3.pdf

B1JBEN000002 Datasheet

B1JBEN000002 pinout

B1JBEN000002 pdf

RJP30E3DPP-M0 Datasheet

RJP30E2DPK-M0 Datasheet

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10N120BND PDF – 1200V, 35A, IGBT – HGTG10N120BND

Posted on by pinout

This post explains for the IGBT.

The Part Number is HGTG10N120BND.

The function of this semiconductor is 1200V, 35A, IGBT.

The package is TO-247 Type

Manufacturer: Fairchild Semiconductor

Preview images :10N120BND pdf pinout

Description

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

The 10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

10N120BND datasheet igbt

Features

1. 35A, 1200V, TC = 25°C

2. 1200V Switching SOA Capability

3. Typical Fall Time : 140ns at TJ = 150oC

4. Short Circuit Rating

5. Low Conduction Loss

 

 

10N120BND PDF Datasheet