This post explains for the IGBT.
The Part Number is G80N60UFD, SGH80N60UFD.
The function of this semiconductor is 600V, 80A, Ultrafast IGBT.
The package is TO-3P Type
Manufacturer: Fairchild Semiconductor
Preview images :
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Description
Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
G80N60UFD stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 80 A
4. Collector dissipation : Pd = 195 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G80N60UFD PDF Datasheet
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