Part Number: IKW40T120, K40T120

Function: 1200V, 40A, Discrete IGBT with Anti-Parallel Diode

Package: TO-247 Pin type

Manufacturer: Infineon Technologies

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Description

This is 1200V, 40A, IGBT. The IGBT is insulated-gate bipolar transistor.

Infineon’s TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Pinout

Features

1. Short circuit withstand time – 10 us

2. Designed for :

(1) Frequency Converters
(2) Uninterrupted Power Supply

3. TrenchStop and Fieldstop technology for 1200 V applications offers :

(1) very tight parameter distribution
(2) high ruggedness, temperature stable behavior

4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Low Gate Charge

7. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

8. Qualified according to JEDEC1 for target applications

9. Pb-free lead plating; RoHS compliant

IKW40T120 PDF Datasheet Download