FGA25N120 Datasheet PDF – 1200V, 25A, IGBT – Fairchild

The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number: FGA25N120, FGA25N120ANTD

Function : 1200 V, 25 A NPT Trench IGBT

Package: TO-3P TYPE

Manufacturer: Fairchild

See the preview image and the PDF file for more information.

Image
fga25n120-1200v-igbt

Description

Using Fairchild’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.

FGA25N120 Pinout

fga25n120-datasheet-pinout

 

Features

1. NPT Trench Technology, Positive Temperature Coefficient

2. Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C

3. Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C

4. Extremely Enhanced Avalanche Capability

 

Applications:

1. Induction Heating, Microwave Oven

 

FGA25N120 Datasheet PDF


 

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RJP3045 Datasheet PDF – 360V, 35A, N-ch, IGBT – Renesas

Part Number: RJP3045, RJP3045DPP

Function: 360V, 35A, 25W, N-Channel IGBT

Package: TO-220FP Type

Manufacturer: Renesas, HITACHI

Image:

RJP3045 Datasheet

Description

The RJP3045 is 360V, 35A, 25W, Silicon N Channel IGBT.

The IGBT is insulated-gate bipolar transistor.

 

Features

1. Trench gate technology (G5H series)

2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

3. High speed switching tf = 150 ns typ

4. Low leak current ICES = 1 μA max

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP3045 Datasheet PDF

RJP30E2DPP-M0 Datasheet


RJP30E2DPP-M0 pdf

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