The IGBT is insulated-gate bipolar transistor.
This is one of the transistor types.
Part Number: RJP30H2A, RJP30H2DPK-M0
Manufacturer: Renesas, Panasonic
Package: TO-263, TO-3P Type
Function: N Channel IGBT, 360V, 35A
See the preview image and the PDF file for more information.
Image:
Description
RJP30H2A is Silicon N-Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max
RJP30H2A pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to Emitter voltage : VCES = 360 V
2. Gate to Emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 250 A
5. Collector dissipation : PC = 60 W
6. Junction to case thermal impedance : θj-c = 2.08 °C/ W
7. Junction temperature : Tj = 150 °C
Applications
1. High speed power switching
RJP30H2A Datasheet
Reference Datasheet : RJP30H2DPK-M0
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